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sca sce 130aa thyristor module inter nal con?gurations ?Y ul; e76102 m ."9 ."9 ? ? ? . tdsfxjohefquinn 5d1pjou#puupntjef 5d1pjou#puupntjef 5d1pjou 5d1pjou unit gmm sca sce 130aa advantages L w isolated package w
?=(==<_= w di/dt 200a/?s w di/dt 200a/?s w dv/dt 1000v/?s w dv/dt 1000v/?s w i t(a v) 130ax i t(rms) 205ax i tsm 5000a w i t(a v) 130ax i t(rms) 205ax i tsm 5000a applications ? w v arious rectifiers, motor drives, heater controls, and power supplies w
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? maximum ratings ?? unless otherwise speci?ed tj25???tj25?? symbol ? item ?? ratings unit g sca130aa80 sce130aa80 sca130aa160 SCE130AA160 sca130aa180 sce130aa180 v rrm *repetitive peak reverse v oltage ?`R?R 800 1600 1800 v v rsm *non-repetitive peak reverse v oltage ?`R?R 960 1700 1900 v v drm repetitive peak of f-state v oltage ?`R?R 800 1600 1800 v symbol ? item ?? conditions ratings unit g i t a v i f a v *a verage on-state forwar d curr ent ?? single phase, half wave, 180 conduction, g??180?? t c92 130 a i t rms i f rms *r.m.s. on-state forwar d curr ent g? single phase, half wave, 180 conduction, g?g180?? t c92 205 a i tsm i fsm *sur ge on-state forwar d curr ent ??`? ?cycle, 50/60hz, peak value, non-r epetitive 50 /60hz?g???R 5000/5400 a i 2 t *i 2 t \rge v alue for one cycle sur ge curr ent ??`?? 125000 a 2 s p gm peak gate power dissipation ?``?p? 10 w p g a v a verage gate power dissipation ?`?p? 3 w i fgm peak gate curr ent ?`` 3 a v fgm peak gate v oltage forwar d ?``?R 10 v v rgm peak gate v oltage reverse ?``?R 5 v di/dt critical rate of rise of on-state curr ent R?N i g 100ma, v d ?v drm , di g /dt0.1a/s 200 a/s v iso *isolation br eakdown v oltage ~F?R a.c. 1minute ga.c.g 3000 v tj *operating junction t emperatur e ??? 40125 t stg *storage t emperatur e ? 40125 mounting t or que ?? mountm6? recommended value ?X 2.53.9n ? m 4.7 n ? m t erminalm6 recommended value ?X 2.53.9n ? m 4.7 mass | t ypical value ?? 210 g ", , " , ( , (
", , " , ( sca sce sca130aa-s75-1303
sca ( sce ) 130aa 1fbl'psxbse(buf7pmubhf7 e????? q?y 1fbl(buf1pxfs8 e?????? 1fbl(buf$vssfou" e????? q?v .byjnvn(buf/po5sjhhfs7pmubhf 7 ? ????y "wfsbhf(buf1pxfs8 e?????? (buf$ibsbdufsjtujdt ??????
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q 0otubuf7pmubhf%spqy7 5. 7 |??yy7 5. 7 0otubuf1fbl$vssfouy* 5 " | ? ? v * 5 " yyy.by yyy.by electrical characteristics ?? unless otherwise speci?ed tj25???tj25?? symbol ? item ?? conditions ratings unit g i drm repetitive peak of f-state curr ent, max ?? tj125, v d v drm 100 ma i rrm *repetitive peak reverse curr ent, max tj125, v r v rrm 100 ma v tm v fm *on-state forwar d v oltage, max ????R i t 500a 1.5 v v t to *thr eshold v oltage, max ?R tj25 1.1 v tj125 0.94 rt *dynamic resistance, max ??? tj25 0.84 m tj125 1.22 i gt gate t rigger curr ent, max ??`??? v d 6v , i t 1a 100 ma v gt gate t rigger v oltage, max ??`????R v d 6v , i t 1a 3 v v gd gate non-t rigger v oltage, min `?????R tj125, v d ?v drm 0.25 v dv/dt critical rate of rise of of f-state v oltage, min R?R?N tj125, v d ?v drm , exp. waveform 1000 v/s rth j-c *thermal impedance, max ? cont., junction to case , per one element ??D`g cont., g? 0.18 /w rth j-c *ef fective thermal impedance, max g? sin.180 , junction to case, per one element ??D`g, sin.180 , g? 0.19 /w r ec.120 , junction to case, per one element ??D`g, r ec.120 , g? 0.2 rth c-s *interface thermal impedance, max ?? case to heat sink, per one element `D?`?g, g? thermal conductivity silicon gr ease 710 3 w/M ? ??????710 3 w/M ? 0.1 /w *mark: thyristor and diode part, no mark: thyristor part. ??? ????`??Im?????m??
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